Supplier Device Package:
Current - Reverse Leakage @ Vr:
Capacitance @ Vr, F:
Voltage - DC Reverse (Vr) (Max):
Reverse Recovery Time (trr):
Operating Temperature - Junction:
Imagen Parte Fabricante Descripción MOQ Valores Acción
1SS307(TE85L,F) Toshiba Semiconductor and Storage
DIODE GEN PURP 30V...
1
RFQ
5,466
In-stock
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1SS307E,L3F Toshiba Semiconductor and Storage
DIODE GEN PURP 80V...
1
RFQ
50,000
In-stock
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1SS397TE85LF Toshiba Semiconductor and Storage
DIODE GEN PURP 400...
1
RFQ
50,000
In-stock
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