JDH2S01FSTPL3

Fabricante :

Toshiba Semiconductor and Storage

categoria de producto :

Diodos - RF

Capacitance @ Vr, F :

0.6pF @ 0.2V, 1MHz

Current - Max :

25 mA

Diode Type :

Schottky - Single

Operating Temperature :

125°C (TJ)

Package / Case :

2-SMD, Flat Lead

Power Dissipation (Max) :

-

Product Status :

Last Time Buy

Resistance @ If, F :

-

Supplier Device Package :

fSC

Voltage - Peak Reverse (Max) :

4V