HS1ML R3G

N.º de pieza del fabricante
HS1ML R3G
Fabricante
Taiwan Semiconductor Corporation
Paquete/Caso
-
Ficha de datos
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Descripción
DIODE GEN PURP 1KV 1A SUB SMA
Valores:
En stock

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Fabricante :
Taiwan Semiconductor Corporation
categoria de producto :
Diodos - Rectificadores - Simples
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Current - Average Rectified (Io) :
1A
Current - Reverse Leakage @ Vr :
5 µA @ 1000 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
DO-219AB
Product Status :
Active
Reverse Recovery Time (trr) :
75 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
Sub SMA
Voltage - DC Reverse (Vr) (Max) :
1000 V
Voltage - Forward (Vf) (Max) @ If :
1.7 V @ 1 A
Hojas de datos
HS1ML R3G

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