WNSC101200WQ

N.º de pieza del fabricante
WNSC101200WQ
Fabricante
WeEn Semiconductors
Paquete/Caso
-
Ficha de datos
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Descripción
SILICON CARBIDE POWER DIODE
Valores:
En stock

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Fabricante :
WeEn Semiconductors
categoria de producto :
Diodos - Rectificadores - Simples
Capacitance @ Vr, F :
510pF @ 1V, 1MHz
Current - Average Rectified (Io) :
10A
Current - Reverse Leakage @ Vr :
110 µA @ 1200 V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
175°C (Max)
Package / Case :
TO-247-2
Product Status :
Active
Reverse Recovery Time (trr) :
0 ns
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-247-2
Voltage - DC Reverse (Vr) (Max) :
1200 V
Voltage - Forward (Vf) (Max) @ If :
1.6 V @ 10 A
Hojas de datos
WNSC101200WQ

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