UMB3NFHATN

Fabricante :

Rohm Semiconductor

categoria de producto :

Transistores - Bipolar (BJT) - Matrices

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 5V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

150mW

Product Status :

Active

Supplier Device Package :

UMT6

Transistor Type :

2 PNP Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V