HN1C03F-B(TE85L,F)

Fabricante :

Toshiba Semiconductor and Storage

categoria de producto :

Transistores - Bipolar (BJT) - Matrices

Current - Collector (Ic) (Max) :

300mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

350 @ 4mA, 2V

Frequency - Transition :

30MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-74, SOT-457

Power - Max :

300mW

Product Status :

Active

Supplier Device Package :

SM6

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 3mA, 30mA

Voltage - Collector Emitter Breakdown (Max) :

20V