ULN2004APG,C,N

Fabricante :

Toshiba Semiconductor and Storage

categoria de producto :

Transistores - Bipolar (BJT) - Matrices

Current - Collector (Ic) (Max) :

500mA

Current - Collector Cutoff (Max) :

50µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 350mA, 2V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 85°C (TA)

Package / Case :

16-DIP (0.300", 7.62mm)

Power - Max :

1.47W

Product Status :

Obsolete

Supplier Device Package :

16-DIP

Transistor Type :

7 NPN Darlington

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 500µA, 350mA

Voltage - Collector Emitter Breakdown (Max) :

50V