2N5401RA

Fabricante :

Rochester Electronics, LLC

categoria de producto :

Transistores - Bipolar (BJT) - Matrices

Current - Collector (Ic) (Max) :

600mA

Current - Collector Cutoff (Max) :

50µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA, 5V

Frequency - Transition :

400MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

625mW

Product Status :

Active

Supplier Device Package :

TO-92 (TO-226)

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

150V