NHDTC123JTVL

Fabricante :

Nexperia USA Inc.

categoria de producto :

Transistores - Bipolar (BJT) - Simple, prepolarizado

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA, 5V

Frequency - Transition :

170 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

250 mW

Product Status :

Active

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Supplier Device Package :

TO-236AB

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

80 V