SIZ342DT-T1-GE3

Fabricante :

Vishay Siliconix

categoria de producto :

Transistores - FET, MOSFET - Matrices

Current - Continuous Drain (Id) @ 25°C :

15.7A (Ta), 100A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

-

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Power - Max :

3.6W, 4.3W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

11.5mOhm @ 14A, 10V

Supplier Device Package :

8-Power33 (3x3)

Vgs(th) (Max) @ Id :

2.4V @ 250µA