HUF75307T3ST

Fabricante :

Rochester Electronics, LLC

categoria de producto :

Transistores - FET, MOSFET - Simple

Current - Continuous Drain (Id) @ 25°C :

2.6A (Ta)

Drain to Source Voltage (Vdss) :

55 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

250 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

1.1W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.6A, 10V

Supplier Device Package :

SOT-223-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA