SQ4401EY-T1_GE3

Fabricante :

Vishay Siliconix

categoria de producto :

Transistores - FET, MOSFET - Simple

Current - Continuous Drain (Id) @ 25°C :

17.3A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

115 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4250 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Power Dissipation (Max) :

7.14W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

14mOhm @ 10.5A, 10V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA