TK20P04M1,RQ(S

Fabricante :

Toshiba Semiconductor and Storage

categoria de producto :

Transistores - FET, MOSFET - Simple

Current - Continuous Drain (Id) @ 25°C :

20A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

985 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

27W (Tc)

Product Status :

Last Time Buy

Rds On (Max) @ Id, Vgs :

29mOhm @ 10A, 10V

Supplier Device Package :

DPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.3V @ 100µA