SQ2319ES-T1-GE3

Fabricante :

Vishay Siliconix

categoria de producto :

Transistores - FET, MOSFET - Simple

Current - Continuous Drain (Id) @ 25°C :

4.6A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

16 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

620 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

75mOhm @ 3A, 10V

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 250µA