HUF76143S3ST

N.º de pieza del fabricante
HUF76143S3ST
Fabricante
Rochester Electronics, LLC
Paquete/Caso
-
Ficha de datos
Descargar
Descripción
N-CHANNEL POWER MOSFET
Valores:
En stock

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Fabricante :
Rochester Electronics, LLC
categoria de producto :
Transistores - FET, MOSFET - Simple
Current - Continuous Drain (Id) @ 25°C :
75A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
3900 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
225W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
5.5mOhm @ 75A, 10V
Supplier Device Package :
TO-263AB
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3V @ 250µA
Hojas de datos
HUF76143S3ST

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